类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 子类别 | 电压 - 额定直流 | 最大功率耗散 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 极性 | 配置 | 行间距 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 产品类别 | 晶体管类型 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 产品类别 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||
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MCH6604-TL-E | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | LIFETIME (Last Updated: 11 hours ago) | 表面贴装 | 6-SMD, Flat Leads | YES | 6 | 2 | 190 ns | 150°C TJ | Tape & Reel (TR) | 2006 | e6 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 800mW | 6 | Dual | 800mW | 18 ns | 2 N-Channel (Dual) | 7.8 Ω @ 50mA, 4V | 6.6pF @ 10V | 1.57nC @ 10V | 42ns | 50V | 105 ns | 250mA | 10V | 50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QS6J11TR | ROHM Semiconductor | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 1 | 65 ns | 150°C TJ | Tape & Reel (TR) | 2009 | e1 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 600mW | 鸥翼 | 260 | 10 | *J11 | 6 | R-PDSO-G8 | 2 | Dual | 增强型MOSFET | 10 ns | 2 P-Channel (Dual) | SWITCHING | 105m Ω @ 2A, 4.5V | 1V @ 1mA | 770pF @ 6V | 6.5nC @ 4.5V | 17ns | 12V | 35 ns | 2A | 10V | 2A | 0.105Ohm | 8A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMQ8203 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 12-WDFN Exposed Pad | 12 | 210mg | SILICON | 4 | 3.4A 2.6A | -55°C~150°C TJ | Tape & Reel (TR) | GreenBridge™ PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | FDMQ8203 | Dual | 增强型MOSFET | 2.5W | DRAIN | 2 N and 2 P-Channel (H-Bridge) | SWITCHING | 110m Ω @ 3A, 10V | 4V @ 250μA | 210pF @ 50V | 5nC @ 10V | 2.8ns | 100V 80V | N-CHANNEL AND P-CHANNEL | 2.7 ns | 2.6A | 3V | 20V | 6A | 0.11Ohm | -80V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 3 V | 750μm | 5mm | 4.5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NX7002AKS,115 | Nexperia USA Inc. | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6-TSSOP | 170mA | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | 活跃 | 1 (Unlimited) | 150°C | -55°C | 220mW | 2 | Dual | 6 ns | 220mW | 2 N-Channel (Dual) | 4.5Ohm @ 100mA, 10V | 2.1V @ 250μA | 17pF @ 10V | 0.43nC @ 4.5V | 7ns | 60V | 14 ns | 170mA | 1.6V | 60V | 60V | 17pF | 逻辑电平门 | 3Ohm | 4.5 Ω | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMC4A16DN8TA | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 5.2A Ta 4.7A Ta | 2 | 33 ns | -55°C~150°C TJ | Cut Tape (CT) | 2012 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 60mOhm | Matte Tin (Sn) | 1.8W | 鸥翼 | 260 | 4.7A | 30 | 8 | 2 | Dual | 增强型MOSFET | 2.1W | 3.7 ns | N and P-Channel Complementary | SWITCHING | 50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V | 1V @ 250mA (Min) | 770pF @ 40V 1000pF @ 20V | 17nC @ 10V | 5.5ns | N-CHANNEL AND P-CHANNEL | 18 ns | 5.2A | 20V | 4A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMHC10A07N8TC | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 800mA 680mA | 4 | 5.9 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 870mW | DUAL | 鸥翼 | 260 | 40 | ZXMHC10A07 | 8 | 增强型MOSFET | 1.36W | 1.6 ns | 2 N and 2 P-Channel (H-Bridge) | SWITCHING | 700m Ω @ 1.5A, 10V | 4V @ 250μA | 138pF @ 60V | 2.9nC @ 10V | 2.1ns | 100V | N-CHANNEL AND P-CHANNEL | 3.3 ns | 1A | 20V | 1A | 0.7Ohm | -100V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK7K25-40E,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | SOT-1205, 8-LFPAK56 | YES | 8 | SILICON | 2 | 8.3 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 雪崩 额定 | 32W | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | 2 | Dual | 增强型MOSFET | 32W | DRAIN | 4.4 ns | 2 N-Channel (Dual) | SWITCHING | 25m Ω @ 5A, 10V | 4V @ 1mA | 525pF @ 25V | 7.9nC @ 10V | 4.5ns | 5.2 ns | 27A | 20V | 40V | 40V | 107A | 10 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFHM792TRPBF | Infineon Technologies | 数据表 | 200 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 5.2 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.3W | IRFHM792PBF | Dual | 增强型MOSFET | 2.3W | DRAIN | 3.4 ns | 2 N-Channel (Dual) | SWITCHING | 195m Ω @ 2.9A, 10V | 4V @ 10μA | 251pF @ 25V | 6.3nC @ 10V | 4.7ns | 100V | 2.6 ns | 2.3A | 20V | 3.4A | 0.195Ohm | 100V | 14A | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN4034SSD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 14 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.8W | 鸥翼 | 260 | 40 | DMN4034SSD | 8 | Dual | 增强型MOSFET | 2.14W | 2.7 ns | 2 N-Channel (Dual) | SWITCHING | 34m Ω @ 6A, 10V | 3V @ 250μA | 453pF @ 20V | 18nC @ 10V | 2.7ns | 40V | 6 ns | 4.8A | 20V | 6.3A | 0.034Ohm | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7343QTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 4.7A 3.4A | 2 | Cut Tape (CT) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -55°C | 2W | IRF7343QPBF | 增强型MOSFET | 2W | N and P-Channel | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 55V | N-CHANNEL AND P-CHANNEL | 4.7A | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BUK9K17-60EX | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-1205, 8-LFPAK56 | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 6 | 53W | 鸥翼 | 8 | AEC-Q101; IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 53W | 2 N-Channel (Dual) | SWITCHING | 15.6m Ω @ 10A, 10V | 2.1V @ 1mA | 2223pF @ 25V | 16.5nC @ 5V | 60V | 26A | 0.017Ohm | 60V | 64 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MCH6660-TL-W | ON Semiconductor | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 2 | 2A 1.5A | 150°C TJ | Tape & Reel (TR) | e6 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin/Bismuth (Sn/Bi) | 800mW | DUAL | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 136m Ω @ 1A, 4.5V | 1.3V @ 1mA | 128pF @ 10V | 1.8nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 1.5A | 10V | 2A | 20V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 1.8V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN4027SSD-13 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 15.4 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | HIGH RELIABILITY | 1.8W | 鸥翼 | 260 | 40 | DMN4027SSD | 8 | Dual | 增强型MOSFET | 2.1W | 3.1 ns | 2 N-Channel (Dual) | SWITCHING | 27m Ω @ 7A, 10V | 3V @ 250μA | 604pF @ 20V | 12.9nC @ 10V | 3.1ns | 40V | 7.5 ns | 5.4A | 20V | 7.1A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2520C | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | 6A 4.4A | 2 | 60 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | PowerTrench® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 600mW | 6A | 1W | 600mW | N and P-Channel | 18mOhm @ 6A, 4.5V | 1.5V @ 250μA | 1325pF @ 10V | 20nC @ 4.5V | 19ns | 20V | 6A | 1V | 12V | 20V | 1.325nF | 逻辑电平门 | 35mOhm | 18 mΩ | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QS6K1FRATR | Rohm Semiconductor | 数据表 | 2280 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | 活跃 | 1A (Ta) | QS6K1 | 1(A) | 30(V) | Military | TSMT | -55C to 150C | 12(V) | Enhancement | 2 | Rohm Semiconductor | 无 | 表面贴装 | 30 V | 7 ns | 500 mV | AEC-Q101 | 1.25 W | N-Channel, NPN | + 150 C | - 12 V, + 12 V | 0.000353 oz | - 55 C | 3000 | SMD/SMT | QS6K1FRA | ROHM 半导体 | ROHM 半导体 | 1.7 nC | 170 mOhms | Details | 15 ns | 1 A | 150°C | 卷带 | Automotive, AEC-Q101 | 功率MOSFET | MOSFETs | Si | 6 | N | Dual | 2 Channel | 1.25(W) | 900mW (Tc) | 2 N-Channel (Dual) | 238mOhm @ 1A, 4.5V | 1.5V @ 1mA | 10V | 2.4nC @ 4.5V | 7 ns | 30V | MOSFET | 2 N-Channel | Logic Level Gate, 2.5V Drive | MOSFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AO8822 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | 活跃 | 1 (Unlimited) | 1.5W | 增强型MOSFET | 1.5W | 2 N-Channel (Dual) Common Drain | 18m Ω @ 7A, 10V | 1V @ 250μA | 780pF @ 10V | 18nC @ 10V | 20V | 7A | 12V | 7A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP2004VK-7 | Diodes Incorporated | 数据表 | 1786 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | -65°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 900mOhm | Matte Tin (Sn) | ESD PROTECTION, LOW THRESHOLD | 400mW | FLAT | 260 | 40 | DMP2004VK | 6 | Dual | 增强型MOSFET | 400mW | 2 P-Channel (Dual) | SWITCHING | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 175pF @ 16V | 20V | 530mA | 8V | 0.53A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STS5DNF20V | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 27 ns | -55°C~150°C TJ | Tape & Reel (TR) | STripFET™ II | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 40mOhm | Nickel/Palladium/Gold (Ni/Pd/Au) | 20V | 2W | 鸥翼 | 260 | 5A | 30 | STS5D | 8 | 增强型MOSFET | 2W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 460pF @ 25V | 11.5nC @ 4.5V | 33ns | 10 ns | 5A | 2.7V | 12V | 5A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.65mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS6982S | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 6.3A 8.6A | 2 | 34 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2000 | PowerTrench®, SyncFET™ | Obsolete | 1 (Unlimited) | 30V | 900mW | 2W | 2 N-Channel (Dual) | 28m Ω @ 6.3A, 10V | 3V @ 250μA | 2040pF @ 10V | 12nC @ 5V | 10ns | 14 ns | 8.6A | 3V | 20V | 30V | 逻辑电平门 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTND31015NZTAG | ON Semiconductor | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 6-XFLGA | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | yes | 活跃 | 1 (Unlimited) | 6 | Nickel/Palladium/Gold (Ni/Pd/Au) | 125mW | BOTTOM | 无铅 | 未说明 | 未说明 | SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 125mW | 2 N-Channel (Dual) | SWITCHING | 1.5 Ω @ 100mA, 4.5V | 1V @ 250μA | 12.3pF @ 15V | 20V | 200mA | 0.2A | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC2320TG-G | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 3 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 84.99187mg | SILICON | 20 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 低阈值 | DUAL | 鸥翼 | 260 | 40 | 2 | 增强型MOSFET | 10 ns | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | 15ns | N-CHANNEL AND P-CHANNEL | 15 ns | 2A | 20V | 7Ohm | 200V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.65mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SH8J62TB1 | ROHM Semiconductor | 数据表 | 2500 In Stock | - | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOP | 4.5A | 70 ns | 150°C TJ | Tape & Reel (TR) | 2010 | 活跃 | 1 (Unlimited) | 150°C | 2W | *J62 | 2 | 2W | 7 ns | 2W | 2 P-Channel (Dual) | 56mOhm @ 4.5A, 10V | 2.5V @ 1mA | 800pF @ 10V | 8nC @ 5V | 30V | 4.5A | 20V | -30V | 800pF | 150°C | 逻辑电平门 | 40mOhm | 56 mΩ | 1.75mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7379PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5.8A 4.3A | 2 | 25 ns | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2.5W | DUAL | 鸥翼 | 5.8A | IRF7379PBF | 6.3 mm | 增强型MOSFET | 2.5W | N and P-Channel | SWITCHING | 45m Ω @ 5.8A, 10V | 1V @ 250μA | 520pF @ 25V | 25nC @ 10V | 17ns | N-CHANNEL AND P-CHANNEL | 18 ns | 4.3A | 1V | 20V | 0.045Ohm | 30V | 46A | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDPB58UPE,115 | Nexperia USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 6-UDFN Exposed Pad | YES | 6 | SILICON | 41 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 515mW | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 7 ns | 2 P-Channel (Dual) | SWITCHING | 67m Ω @ 2A, 4.5V | 950mV @ 250μA | 804pF @ 10V | 9.5nC @ 4.5V | 15ns | 20V | 14 ns | 3.6A | 8V | -20V | 14.4A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4842 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 不用于新设计 | 1 (Unlimited) | 2W | 2W | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 2.6V @ 250μA | 448pF @ 15V | 11nC @ 10V | 30V | 7.7A | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 |
MCH6604-TL-E
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
QS6J11TR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
0.856280
FDMQ8203
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NX7002AKS,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
0.373269
ZXMC4A16DN8TA
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
ZXMHC10A07N8TC
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
BUK7K25-40E,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
IRFHM792TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
5.296022
DMN4034SSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
IRF7343QTRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
BUK9K17-60EX
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
MCH6660-TL-W
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
2.010069
DMN4027SSD-13
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
FDW2520C
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
QS6K1FRATR
Rohm Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AO8822
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
DMP2004VK-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.408653
STS5DNF20V
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
FDS6982S
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTND31015NZTAG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
0.692369
TC2320TG-G
Microchip Technology
分类:Transistors - FETs, MOSFETs - Arrays
SH8J62TB1
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
IRF7379PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
PMDPB58UPE,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AO4842
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
